7. INFRARED, PHOTOREFRACTIVE, MAGNETO-OPTICAL, MAGNETIC,
PIEZOELECTRIC MATERIALS, WAFERS AND SUBSTRATES

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top Fe : LNB To Request Form
Iron doped Lithium Niobate crystal (Fe:LiNbO3) is a kind of common used photorefractive materials with large electro-optical (EO) coefficients, high photorefractive sensitivity and high diffraction efficiency. Compared to BaTiO3 series photorefractive crystals, it has some outstanding advantages, such as easy operation and storage, low cost and large size availability, which make it more suitable for volume fabrication and practical devices. Therefore, Fe:LiNbO3 crystal will forecast a wide range applications.

APPLICATIONS:

  • Holographic storage
  • Bragg grating
  • Dynamic holography
  • Optical memories
  • Optical phase conjugation
  • Neutral networks.
MAIN PROPERTIES:
Crystal structure trigonal, space group R3c
Cell parameters, Å a = 0.5148, c = 13.863, z = 6
Curie temperature, °C 1140
Density, g/cm3 4.64
Mohs hardness 5
Color from colorless to brown
Solubility insoluble in H2O
Crystal specifications and coatings can be provided at request.
top SBN To Request Form
Strontium-Barium Niobate (SrxBa 1-xNb2O6 or SBN) is known as an excellent optical and photorefractive material. SBN
It has high electro-optical coefficients, fast response time, high two-wave mixing gain.
Different compositions: SBN:60; SBN:75; different dopants: Ce, Cr, Co; various dopant levels; striation and scatter free; custom fabrication.
The introduction of small amounts of certain transition or rare-earth elements into SBN are used to modify the photorefractive characteristics of the crystal. Two compositions of SBN solid-solution are the most attractive for applications: SBN:60 is a congruently melting composition; SBN:75 has the highest electro-optical coefficients.

APPLICATIONS:

  • Optical computing
  • Phase conjugation
  • Image processing
  • Holography
MAIN PROPERTIES:
SBN x=0.60 SBN x=0.75
Crystal structure 4mm 4mm
Cell parameters, Å a = 12.46, c = 3.946 a = 12.4302, c = 3.9413
Density, g/cm3 5.4 5.4
Mohs hardness 5.5 5.5
Transparency range, µm 0.30 ÷ 6.00 0.30 ÷ 6.00
Refractive index, at 0.633 µm ne = 2.2817, no = 2.3103 ne = 2.2987, no = 2.3117
Absorption coefficient at 0.44 µm, cm-1 0.3 -
Thermooptical coefficient (dne/dT) 3.0 x 10-4 x °K-1 -
Thermal conductivity, mW x cm-1 x °K-1
at 25°C - 6
at 1370 ÷ 1470°C - 8
Electro-optical coefficient, pm/V r13 = 47, r33 = 235 r13 = 67, r33 = 1340
Curie temperature, °C 75 56
Half-wave voltage, V 240 48
Dielectric constant 880 3400
top Fe : INDIUM PHOSPHIDE To Request Form
Iron doped Indium Phosphide crystal (Fe:InP) possess semiinsulating properties, it is mainly used for the growing of epitaxial structures for semiconductors.
Fe:InP boule`s dimensions are up to 30-40 mm diameter and 10-15 cm length. We offer finished elements and [100], [111] oriented wafers.
Specific resistivity ρ ≈ 1 x 106 - 2 x 107 ohm x cm.
Undoped InP crystals are also available.
top GALLIUM ARSENIDE To Request Form
Gallium Arsenide (GaAs) can be used in the range from 1 to 11 µm. It is chemical stable, non-hygroscopic and has good thermal properties. One of the common applications is as the material for windows, lenses, beamsplitters for medium and high power cw CO2-laser systems.

MAIN PROPERTIES:

Useful transparency range, µm 1 - 11
Crystal structure cubic, 43m
Lattice parameter, Å 5.6532
Density, g/cm3 5.32
Knoop hardness, kg/mm2 750
Absorption coefficient at 10.6 µm, cm-1 < 0.01
Refractive index, at 10.6 µm 3.08
Thermal expansion coefficient 5.4 x 10-6 x °K-1
Thermal conductivity, mW x cm-1 x °K-1 400
top SINGLE CRYSTAL AII-BVI COMPOUNDS To Request Form
CVD-TECHNOLOGY
Single crystals of II-VI compounds are grown from the vapor phase by physical transport with helium or argon and by chemical transport with hydrogen or argon-hidrogen gas mixture. Types of materials: ZnS, ZnSe, ZnTe, Zn1-xCdxS, Zn1-xCdxSe, CdSxSe1-x
CVD ZnSe has 4 - 6 times lower absorption coefficient at 10.6 µm compared with polycrystalline ZnSe and is recommended for the usage in high power CO2 laser optics.

CRYSTALLIZATION FROM MELT
At present three types of AIIBVIcrystals are growing with max dimensions:

  • ZnSe - 50 mm dia., 50 mm in hight
  • CdSe - 20 mm dia., 50 mm in hight
  • CdS - 20 mm dia., 100 mm in hight
From these crystals we can fabricate:

ZnSe IR optical components, which operate as elements of high power CO2-lasers (windows, lenses, prisms, beamspliters etc.) Absorptivity at 10.6 µm is no more than 0.002 cm-1. The different coatings on the elements are available.

ZnSe oriented single crystals rods as IR electrooptical modulators with max dimensions 5 x 10 x 45 mm3, any crystallographic orientation, resistivity >1010 Ohm x cm.

ZnSe oriented cubics with dimensions 10 x 10 x 10 mm3, high resistivity (>1010 Ohm x cm).

ZnSe substrates to fabricate heterojurunctions with GaAs film (blue light emission diodes and lasers)-plates 10 x 10 mm2, 10 x 20 mm2, 10 x 30 mm2 or any other form with thickness of 1÷ 2 mm, (111) or (100) orientation, high resistivity (>1010 Ohm x cm), free of twins, EPD is 104/ cm2.

CdS oriented plates with low (<10-1 Ohm x cm) and high resistivity (>108 Ohm x cm)

  SPECIFICATIONS:

ZnSe ZnxCd1-xS
Structure single crystal single crystal
Diameter, mm 50 50
Thickness, mm 10 15
Luminescent emission intensity ration, IEx/Iedge (Iimp) > 10 > 10
Dislocation density, cm-2 < 2 x 105 < 5 x 105
Small-angle boundary density, cm-1 < 40 < 40
Excition band wavelength in luminescence spectrum, nm 444 ± 2 475 ± 5
The variation of local values for wavelength within the plate, nm - ± 3
The number of cavities with size of 15-200 m, pcs/pl. - < 10
Optical absorption (bulk) at 10,6 nm, cm-1 5 x 10-3 -
top Cadmium Telluride and Cadmiumzinktelluride To Request Form
Used for manufacturing electrooptic modulators, radiation and IR radiation receivers and other optical elements for IR optical systems.

SPECIFICATIONS:

CdTe CdZnTe
Diameter, mm 50 50
Thickness, mm 10 10
Dislocation density, cm-2 5 x 104 1 x 104
Small-angle boundary density, cm-1 10 3
Resistivity, Ohm x cm 105 > 105
Optical absorption (bulk) at 10,6 nm, cm-1 0.01 >= 0.01
top Cadmium Selenide, Cadmium Sulphide and Cadmium Sulphoselenide To Request Form
Used for manufacturing laser radiation wavelength tranceducers and electon-ray tubes of red, orangre, yellow and green rays.

SPECIFICATIONS:

CdSe CdS CdSxSe1-x
Diameter, mm 50 50 50
Thickness, mm 30 40 30
Luminescent emission intensity ration, IEx/Iedge (Iimp) > 10 > 10 > 10
Dislocation density, cm-2 < 2 x 105 2 x 105 < 2 x 104
Small-angle boundary density, cm-1 70 70 < 20
Excition band wavelength in luminescence spectrum, nm 690 ± 2 490 ± 2 510 ± 5, 535 ± 10, 560 ± 10, 600 ± 5, 615 +5/-15, 505 ± 5, 625 ± 5
The variation of local values for wavelength within the plate, nm - - ± 1
The number of cavities with size of 15 - 200 m, pcs/pl none <= 10 <= 10
top LANGASIT To Request Form
Crystals of Lanthanum-Gallium Silicate (La3Ga5SiO14 or Langasit) belong to the class of piezoelectric materials with an average value of the electromechanical coupling coefficient (K - 16% for optimal cut). This value of the electromechanical coupling coefficient, sufficiently high temperature stability of frequency characteristics from one crystal to another, as well as lack of phase transition to the melting temperature arouse a great interest of the specialists working in the field of piezothechnology.
Basic Langasit characteristics are given below are compared with Quartz and Lithium Tantalate for BAW:

MAIN PROPERTIES:

Quartz Langasit Lithium Tantalate
Symmetry class 32 32 3m
Phase transition temperature, °C 573.3 - 660
Electromechanical coupling coefficient, % 7.0 16.0 44.0
Optimum cut AT Y X
Temperature coefficient of frequency, ppm 0.6 1.6 4.0
top GGG To Request Form
Gallium Gadolinium Garnet (Gd3Ga5O12 or GGG) single crystal can also be used as a HTS material.

MAIN PROPERTIES:

Crystal structure cubic
Crystal growth method Czochralsky
Crystal growth orientation <100> or <111>
Variations dopands on request
Density, g/cm3 7.07
Lattice parameter, Å 12.383
Mohs hardness 7.5
Dielectric constant 30
Dielectric loss tangent, at 10 GHz ~3.0 x 10-4
Transmission range, µm 0.3 - 7.0
Refractive indexes:
at 577 nm nd = 1.9708; ne= 1.9567
at 625 nm nc = 1.9577; ne= 1.9567
at 2000 nm nc = 1.9500; ne= 1.9567
at 5000 nm nc = 1.9454
Colour colourless
top Magneto-optical glass MOS-04 To Request Form
The product is designed for laser light flux output control in the magnetic field in visible and near-IR spectral range. It is used in manufacture of modulator's optical shutters based on Faraday rotation of the light polarization plane. It features the increased Verdet constant.

Physical Properties:

Density, g/cm3 4.3
Mohs hardness 4 - 5
Refractive index, at 587.5 nm n = 1.6889
Non-linear coefficient, esu 2.65 x 10-13
Thermal expansion coefficient 96.4 x 10-7 x °K-1
Magneto-optical properties:
Verdet constant, rad x T-1 x m-1
λ = 633 nm 73
λ = 1060 nm 21
Optical losses at 633 and 1060 nm, cm-1 0.001
Optical quality (Δ n), cm-1 < 0.5 x 10-6
Elements maximum dimensions, mm dia. 150 x 80
top Magneto-optical glass MOS-10 To Request Form
The product is designed for laser light flux output control in the magnetic field of the visible and near-IR spectral range. It is used in manufacture of modulator's optical shutters based on Faraday rotation of the light polarization plane. It features the increased Verdet constant.

Physical Properties:

Density, g/cm3 4.83
Mohs hardness 4 - 5
Refractive index, at 587.5 nm n = 1.7350
Non-linear coefficient, esu 3.07 x 10-13
Thermal expansion coefficient 63.2 x 10-7 x °K-1
Magneto-optical properties:
Verdet constant, rad x T-1 x m-1
λ = 633 nm 87
λ = 1060 nm 26
Optical losses at 633 and 1060 nm, cm-1 0.001
Optical quality (Δ n), cm-1 < 0.5 x 10-6
Elements maximum dimensions, mm dia. 150 x 100
top RUTILE To Request Form
Synthetically grown Titanium Dioxide crystals (TiO2 or Rutile) have strong birefringency, wide transmission range and good mechanical properties. It is used for optical isolators, prisms, polarizing cubes, etc. Typical size of boules is dia. ca. 10-15 mm, length ca. 25 mm. We offer as blanks, as well as laser grade finished elements.

MAIN PROPERTIES:

Density, g/cm3 4.25
Crystal structure tetragonal
Lattice parameters, Å a = 4.593, c = 2.958
Mohs hardness 6 - 6.5
Heat capacity at T=25°C, cal/g x °K 0.17
Thermal expansion coefficient:  
α parallel 9.19 x 10-6 x °K-1
α perpendicular 7.14 x 10-6 x °K-1
Thermal conductivity, cal/cm x S x °K:  
α parallel 3 x 10-2
α perpendicular 2.1 x 10-2
Transmission range , µm 0.4 - 5.0
Refractive indexes:
at 0.546 µm no = 2.65; ne = 2.95
at 0.5893 µm no = 2.59; ne = 2.90
at 1.3 µm no = 2.74; ne = 2.73
top SAPPHIRE SUBSTRATES To Request Form
Sapphire single crystal possesses an unique combination of excellent optical, physical and chemical properties and is a perfect material for substrate performance. Sapphire substrates are well-known for their high quality crystalline structure, dielectric isolation, uniform dielectric constant. We offer sapphire substrates for different applications, including blue LEDs according to specification below as well as per custom´s demand.

MAIN PROPERTIES:

Diameter, mm 50.8 ± 0.05 76.2 ± 0.05 100.0 ± 0.05
Thickness, µm 330-430 ± 50 380-480 ± 50 625-725 ± 50
Orientation C (0001) ± 0.1° C (0001) ± 0.1° C (0001) ± 0.1°
TTV and Bow, µm < 20 < 25 < 30
Front surface Epi polished Epi polished Epi polished
Back side Lapped or polished Lapped or polished Lapped or polished
Flatness, µm < 5 < 5 < 5
Roughness (Ra), nm < 0.5 < 0.8 < 1.0
Flat length, mm 16.0 ± 0.5 22.0 ± 0.5 32.5 ± 0.5
Primary flat location A or M ± 0.5° A or M ± 0.5° A or M ± 0.5°
Secondary flat location 90° ccw to primary 90° ccw to primary 90° ccw to primary