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Synthetic
single-crystal sapphire is a single crystal form of corundum,
Al2O3, also known as alpha-alumina, alumina, and single crystal Al2O3.
Sapphire is aluminium oxide in the purest form with no porosity or grain
boundaries, making it theoretically dense. The combination of favourable
chemical, electrical, mechanical, optical, surface, thermal, and durability
properties make sapphire a preferred material for high performance system
and component designs.
High purity and low dislocation density make Kyropoulos
sapphire an ideal material for a wide range of electronic substrates.
We can supply epi-polished sapphire substrates according to SEMI standard,
as well as per customer specification. We are able to deliver the tightest
specification in the industry to meet all your particular requirements.
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We
deliver for scientific and industrial applications:
| - Sapphire
Semiconductor Substrates/Wafers: |
2",
3", 4" and 150 mm, C (0001)-plane epi-polished substrates
for GaN deposition |
| - Sapphire
Semiconductor Substrates/Wafers: |
2",
3", 4" and 6", sapphire electronic substrates for
epitaxial and thin film deposition |
| - Epitaxial
structures “silicon-on-sapphire” (SOS): |
dia./width
50.8, 76 or 100 mm, orientation R, thickness/Length, material
surface and Ends/Edge quality - SEMI standard |
Typical specifications:
4" sapphire
substrates for Nitride based devices
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Material:
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High purity
optical grade monocrystalline Kyropoulos Al2O3
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Orientation:
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C-axis [0001]
± 0.1° or any off-orientation ±0.1°
towards M-axis or A-axis
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Diameter:
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100 ±
0.05 mm
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Thickness:
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430, 500
or 725 ± 25 µm
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TTV:
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< 20
µm
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Bow:
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< 10
µm
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Front Surface:
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Epi-polished
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Backside:
Or:
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Fine ground
Optically polished
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Flatness:
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< 10
µm
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Surface
Roughness (Ra):
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< 0.2
nm
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Orientation
Flat:
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32.5 mm
± 1.0 mm
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Primary
Flat Location:
Or:
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A-axis [11-20]
± 0.5°
M-axis [10-10] ± 0.5°
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Secondary
Flat (on request):
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90°
counterclockwise to Primary flat
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Package:
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Single wafer
pack or 25 wafers EMPAK Ultrapack cassette
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Silicon-on-Sapphire wafers:
| Substrate
diameter, mm |
50.8
± 0.1, 76 ± 0.5 or 100 ± 0.5 |
| Substrate
orientation |
(-1012)
R ± 0.5° |
| Substrate
thickness, µm |
330-430
± 25, 450 ± 25 or 460 ± 25 |
| Silicon
layer orientation |
(100) |
| Back
side |
Ground |
| 1.
Gages applications |
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| Thickness
of heteroepitaxial layer, µm |
0.5
- 5.0 ± 8% |
| Conductivity
type of heteroepitaxial layer |
P
(Boron) |
| Resistivity
of Silicon film, Ohm |
10
- 30 ± 8% |
| 2.
IC's application |
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| Thickness
of heteroepitaxial layer, µm |
0.1
- 1.0 ± 8% |
| Conductivity
type of heteroepitaxial layer |
n
(Phosphorous), p (Boron), i (Intrinsic - undoped) |
| Specific
resistivity, Ohm x cm |
1
- 200 |
Note: Other
wafer tolerances and laser marking are available.
Our facilities
allow regulation of the production of substrates from crystal growth
to fabrication, and to accommodate special requests.
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