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Gallium
Phosphide (GaP) has an energy band gap (EG) that can emit visible
light, but it is an indirect gap semiconductor. It is combined with
GaAs to produce GaAs1-xPx alloy which is both direct and has a light
producing energy band gap (EG) for of 0.28 <= x <= 0.45. GaP is
also used in manufacturing light-emitting diodes (LEDs). It can emit
green light.
InP wafers are attracting much attention as
a key component in optical fiber communications equipment. Specifically,
the semi-insulating InP mirror wafer is expected to become the mainstream
material for photodiodes used in a high-speed communications system
with a transmission speed of 40 Gbps or higher. Demand for InP is also
expected to grow for the use in the next-generation mobile phones which
require communications with higher speed and larger capacity. |
MolTech
has been supplying high quality wafers for semiconductor industries since 1995.
If you need any of these crystals, what ever small or larger quantity,
please feel free to contact us.
Typical Properties:
| Substrates |
InP
|
InSb
|
InP:
Fe
|
InP:Zn
|
GaP
|
GaAs:Te
|
GaAs:Zn
|
GaAs
polycrystal
|
| Resistivity,
om.cm |
0.03
- 0.2
|
-
|
1x106
- 2x107
|
-
|
-
|
-
|
-
|
-
|
| Dia |
-
|
-
|
1,011
- 1,2511
|
1,011
- 1,2511
|
-
|
1,2511
|
1,511
|
-
|
| Orientation |
(100), (111)
|
(100), (111)
|
(100), (111)
|
(100),
(111)
|
(100),
(111)
|
(100)
|
-
|
-
|
| Carrier Concentration,
cm-3 |
(0.8
- 2.0) x 1015
|
(8
- 30) x 1013
|
-
|
(0.2
- 1.0) x 1018
|
(4 - 6) x
1016 |
2
x 1017
|
1.0
x 1019
|
2
x 1015
|
| Mobility,
cm2/V.Sec |
3500
- 4000
|
-
|
-
|
50
-70
|
-
|
4500
|
-
|
5200
|
| Grown technology |
-
|
dopants are possible
|
-
|
-
|
dopants are possible
|
-
|
Cz
|
Bridjman
|
We also supply elements
made from mentonied crystals with different cross-sections and dimensions
according to customers' specifications.
|